Fabrication of a high fill ratio reflective spatial light modulator with hidden hinge

ABSTRACT

A method of fabricating a spatial light modulator. The method includes forming cavities in a first substrate and fabricating electrodes on a second substrate. The method also includes bonding the first substrate to the second substrate and forming a mirror plate from a portion of the first substrate. The mirror plate has an upper surface and a lower surface. The method further includes forming a hinge coupled to the mirror plate and forming a reflective surface coupled to the upper surface of the mirror plate.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of pending U.S. patentapplication Ser. No. 11/366,991 filed Mar. 1, 2006 which is acontinuation of U.S. patent application Ser. No. 10/849,404, filed May18, 2004, now U.S. Pat. No. 7,034,984, which is a continuation of U.S.patent application Ser. No. 10/610,967, filed Jun. 30, 2003, nowabandoned, which claims priority from provisional U.S. PatentApplication No. 60/475,404, filed Jun. 2, 2003, the disclosures of whichare incorporated by reference. U.S. patent application Ser. No.10/610,967 was also a continuation-in-part of U.S. patent applicationSer. No. 10/378,056, filed Feb. 27, 2003, the disclosure of which isincorporated by reference, which claims the benefit of provisional U.S.Patent Application No. 60/390,389, filed Jun. 19, 2002. U.S. patentapplication Ser. No. 10/610,967 was also a continuation-in-part of U.S.patent application Ser. No. 10/378,041, filed Feb. 27, 2003, thedisclosure of which is incorporated by reference, which claims thebenefit of provisional U.S. Patent Application No. 60/390,389, filedJun. 19, 2002. U.S. patent application Ser. No. 10/610,967 was also acontinuation-in-part of U.S. patent application Ser. No. 10/378,058,filed Feb. 27, 2003, the disclosure of which is incorporated byreference, which claims the benefit of provisional U.S. PatentApplication No. 60/390,389, filed Jun. 19, 2002.

BACKGROUND OF THE INVENTION

This invention relates to spatial light modulators (SLMs), and moreparticularly to a micro mirror structure with hidden hinges to maximizepixel fill ratio, minimize scattering and diffraction, and achieve ahigh contrast ratio and high image quality.

Spatial light modulators (SLMs) have numerous applications in the areasof optical information processing, projection displays, video andgraphics monitors, televisions, and electrophotographic printing.Reflective SLMs are devices that modulate incident light in a spatialpattern to reflect an image corresponding to an electrical or opticalinput. The incident light may be modulated in phase, intensity,polarization, or deflection direction. A reflective SLM is typicallycomprised of an area or two-dimensional array of addressable pictureelements (pixels) capable of reflecting incident light. A key parameterof SLMs, especially in display applications, is the portion of theoptically active area to the pixel area (also measured as the fractionof the SLM's surface area that is reflective to the total surface areaof the SLM, also called the “fill ratio”). A high fill ratio isdesirable.

Prior art SLMs have various drawbacks. These drawbacks include, but arenot limited to: (1) a lower than optimal optically active area thatreduces optical efficiency; (2) rough reflective surfaces that reducethe reflectivity of the mirrors; (3) diffraction and scattering thatlowers the contrast ratio of the display; (4) use of materials that havelong-term reliability problems; and (5) complex manufacturing processesthat increase the expense and lower the yield of the device.

Many prior art devices include substantial non-reflective areas on theirsurfaces. This provides low fill ratios, and provides lower than optimumreflective efficiency. For example, U.S. Pat. No. 4,229,732 disclosesMOSFET devices that are formed on the surface of a device in addition tomirrors. These MOSFET devices take up surface area, reducing thefraction of the device area that is optically active and reducingreflective efficiency. The MOSFET devices on the surface of the devicealso diffract incident light, which lowers the contrast ratio of thedisplay. Further, intense light striking exposed MOSFET devicesinterfere with the proper operation of the devices, both by charging theMOSFET devices and overheating the circuitry.

Some SLM designs have rough surfaces that scatter incident light andreduce reflective efficiency. For example, in some SLM designs thereflective surface is an aluminum film deposited on an LPCVD siliconnitride layer. It is difficult to control the smoothness of thesereflective mirror surfaces as they are deposited with thin films. Thus,the final product has rough surfaces, which reduce the reflectiveefficiency.

Another problem that reduces reflective efficiency with some SLMdesigns, particularly in some top hanging mirror designs, is largeexposed hinge surface areas. These exposed hinge surface areas result inscattering and diffraction due to the hinge structure, which negativelyimpacts contrast ratio, among other parameters.

Many conventional SLMs, such as the SLM disclosed in U.S. Pat. No.4,566,935, have hinges made of aluminum alloy. Aluminum, as well asother metals, is susceptible to fatigue and plastic deformation, whichcan lead to long-term reliability problems. Also, aluminum issusceptible to cell “memory,” where the rest position begins to tilttowards its most frequently occupied position. Further, the mirrorsdisclosed in the U.S. Pat. No. 4,566,935 patent are released by removingsacrificial material underneath the mirror surface. This technique oftenresults in breakage of the delicate micro mirror structures duringrelease. It also requires large gaps between mirrors in order foretchants to remove the sacrificial material underneath the mirrors,which reduce the fraction of the device area that is optically active.

Other conventional SLMs require multiple layers including a separatelayer for the mirrors, hinges, electrodes and/or control circuitry.Manufacturing such a multi-layer SLM requires use of multi-layer thinfilm stacking and etching techniques and processes. Use of thesetechniques and processes is expensive and produces lower yields. Forexample, use of these techniques often involves extensive deposition andremoval of sacrificial materials underneath the surface of the mirrorplates. Multi-layer thin film deposition and stacking underneath thesurface of the mirror plate typically results in rougher mirrorsurfaces, thereby reducing the reflective efficiency of the mirrors.Moreover, having the mirror and the hinge in a different layer orsubstrate results in translational displacement upon deflection of themirror. With translational displacements, the mirrors in an array mustbe spaced to avoid mechanical interference among adjacent mirrors.Because the mirrors in the array cannot be located too closely to theother mirrors in the array, the SLM suffers from a lower than optimaloptically active area or lower fill ratio.

What is desired is an SLM with improved reflective efficiency, SLMdevice long-term reliability, and simplified manufacturing processes.

SUMMARY OF THE INVENTION

The present invention is a spatial light modulator (SLM). In oneembodiment, the SLM has a reflective selectively deflectable micromirror array fabricated from a first substrate bonded to a secondsubstrate having individually addressable electrodes. The secondsubstrate may also have addressing and control circuitry for the micromirror array. Alternatively, portions of the addressing and controlcircuitry are on a separate substrate and connected to the circuitry andelectrodes on the second substrate.

The micro mirror array includes a controllably deflectable mirror platewith a highly reflective surface to reflect incident light. The mirrorplate is connected to a hinge by a connector. The hinge is in turnconnected to a spacer support frame with spacer support walls. The hingeis substantially concealed under the reflective surface. By hiding thehinge substantially under the reflective surface, the amount ofscattering and diffraction due to light hitting and reflecting off of anexposed hinge structure is eliminated, thereby maximizing the contrastratio of the device.

The mirror plate, the connector, the hinge, the spacer support frame,and the spacer support walls are fabricated from a first substrate. Thisfirst substrate is a wafer of a single material, single crystal siliconin one embodiment. The spacer support walls provide separation betweenthe mirror plate and an electrode associated with that mirror plate thatcontrols the deflection of the mirror plate. The electrode is located onthe second substrate and the second substrate is bonded to the micromirror array.

Because the hinge and the mirror plate are in the same substrate (i.e.,in the same layer), there is no translational movement or displacementas the mirror rotates about the longitudinal axis of the hinge. With notranslational displacement, the gap between the mirrors and the supportwalls are limited only by the fabrication technology and process. Theclose spacing of the mirror plates and the hiding of by positioning thehinge substantially beneath the reflective surface allow for a high fillratio for the micro mirror array, improved contrast ratio, minimizedscattering and diffraction of light, and virtual elimination of lightpassing through the micro mirror array to strike the circuitry on thesecond substrate.

Further, because the mirror plate and the hinge are fabricated from asingle crystal silicon material in a preferred embodiment, the resultinghinge is stronger and more reliable and suffers from virtually no memoryeffect, fractures along grain boundaries or fatigue. A single crystalsilicon substrate has significantly fewer micro defects and cracks thanother materials, especially deposited thin films. As a result, it isless likely to fracture (or to propagate micro fractures) along grainboundaries in a device. Also, use of a single substrate as in thepresent invention minimizes the use of multi-layer thin film stackingand etching processes and techniques. In the present invention,sacrificial material deposition and removal is confined to a localizedarea, i.e., around the hinge. Moreover, sacrificial material need not beremoved from under the mirrors in the present invention. Therefore,removal of the sacrificial material is much easier and the upper surfaceof the mirror plate remains smooth permitting the reflective surface tobe added to an ultra smooth surface.

The SLM is fabricated with few steps, which keeps the fabrication costand complexity low. Cavities are formed in a first side of the firstsubstrate. In parallel, the electrodes and addressing and controlcircuitry are fabricated on a first side of the second substrate. Thefirst side of the first substrate is bonded to the first side of thesecond substrate. The sides are aligned so the electrodes on the secondsubstrate are in proper relation with the mirror plates that theelectrodes will control. The first substrate is thinned to apre-determined, desired thickness, a hinge is etched, a sacrificialmaterial is deposited in an area around the hinge, a surface isplanarized, a reflective surface is deposited to cover the hinge, amirror plate is released by etching, and the sacrificial layer aroundthe hinge is removed.

The net result is an easily manufacturable SLM that can achieve highoptical efficiency and performance to produce high quality imagesreliably and cost-effectively.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram that illustrates the general architectureof a spatial light modulator according to one embodiment of theinvention.

FIG. 2 a is a perspective view of a single micro mirror in oneembodiment of the invention.

FIG. 2 b is a perspective view of a corner of the micro mirror of FIG. 2a.

FIG. 3 is a perspective view of a single micro mirror without thereflective surface showing the top and sides of a mirror plate of amicro mirror array in one embodiment.

FIG. 4 a is a perspective view showing the bottom and sides of a singlemicro mirror in one embodiment of the invention.

FIG. 4 b is a perspective view of a corner of the micro mirror of FIG. 4a.

FIG. 5 is a perspective view showing the top and sides of a micro mirrorarray in one embodiment of the invention.

FIG. 6 is a perspective view showing the bottom and sides of a micromirror array in one embodiment of the invention.

FIG. 7 a is a cross sectional view of the undeflected micro mirror shownin FIG. 2 a along an offset diagonal cross section.

FIG. 7 b is a top view of the electrodes and landing tips beneath amirror plate formed in the second substrate in one embodiment of theinvention.

FIG. 7 c is a cross sectional view of the undeflected micro mirror shownin FIG. 2 a along a center diagonal cross section.

FIG. 8 is a cross sectional view of the deflected micro mirror shown inFIG. 2 a.

FIG. 9 a is a flowchart illustrating a preferred embodiment of how thespatial light modulator is fabricated.

FIG. 9 b through 9 m are cross sectional diagrams illustrating thefabrication of the spatial light modulator in greater detail.

FIG. 10 illustrates a preferred embodiment of a mask for formingcavities in the first substrate.

FIG. 11 is a perspective view of one embodiment of the electrodes formedon the second substrate.

FIG. 12 a is a perspective view of a micro mirror in an alternativeembodiment of the invention.

FIG. 12 b is a perspective view of a corner of the micro mirror of FIG.12 a.

FIG. 13 is a perspective view showing the bottom and sides of the micromirror in the embodiment shown in FIG. 12 a.

FIG. 14 is a perspective view showing the top and sides of a micromirror array in an alternate embodiment of the invention.

FIG. 15 is a perspective view showing the bottom and sides of a micromirror array in the alternate embodiment shown in FIG. 14.

FIG. 16 a through FIG. 16 e are diagrams illustrating an alternativemethod of fabricating cavities in a first substrate.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

The reflective spatial light modulator (“SLM”) 100 has an array 103 ofdeflectable mirrors 202. Individual mirrors 202 can be selectivelydeflected by applying a voltage bias between that mirror 202 and acorresponding electrode 126. The deflection of each mirror 202 controlslight reflected from a light source to a video display. Thus,controlling the deflection of a mirror 202 allows light striking thatmirror 202 to be reflected in a selected direction, and thereby allowscontrol of the appearance of a pixel in the video display.

Spatial Light Modulator Overview:

FIG. 1 is a schematic diagram that illustrates the general architectureof an SLM 100 according to one embodiment of the invention. Theillustrated embodiment has three layers. The first layer is a mirrorarray 103 that has a plurality of deflectable micro mirrors 202. In onepreferred embodiment, the micro mirror array 103 is fabricated from afirst substrate 105 that, upon completion of fabrication, is a singlematerial, such as single crystal silicon in the SLM 160.

The second layer is an electrode array 104 with a plurality ofelectrodes 126 for controlling the micro mirrors 202. Each electrode 126is associated with a micro mirror 202 and controls the deflection ofthat micro mirror 202. Addressing circuitry allows selection of a singleelectrode 126 for control of the particular micro mirror 202 associatedwith that electrode 126.

The third layer is a layer of control circuitry 106. This controlcircuitry 106 has addressing circuitry, which allows the controlcircuitry 106 to control a voltage applied to selected electrodes 126.This allows the control circuitry 106 to control the deflections of themirrors 202 in the mirror array 103 via the electrodes 126. Typically,the control circuitry 106 also includes a display control 108, linememory buffers 110, a pulse width modulation array 112, and inputs forvideo signals 120 and graphics signals 122. A micro controller 114,optics control circuitry 116, and a flash memory 118 may be externalcomponents connected to the control circuitry 106, or may be included inthe control circuitry 106 in some embodiments. In various embodiments,some of the above listed parts of the control circuitry 106 may beabsent, may be on a separate substrate and connected to the controlcircuitry 106, or other additional components may be present as part ofthe control circuitry 106 or connected to the control circuitry 106.

In one embodiment, both the second layer 104 and the third layer 106 arefabricated using semiconductor fabrication technology on a single secondsubstrate 107. That is, the second layer 104 is not necessarily separateand above the third layer 106. Rather, the term “layer” is an aid forconceptualizing different parts of the spatial light modulator 100. Forexample, in one embodiment, both the second layer 104 of electrodes 126is fabricated on top of the third layer of control circuitry 106, bothfabricated on a single second substrate 107. That is, the electrodes126, as well as the display control 108, line memory buffers 110, andthe pulse width modulation array 112 are all fabricated on a singlesubstrate in one embodiment. Integration of several functionalcomponents of the control circuitry 106 on the same substrate providesan advantage of improved data transfer rate over conventional spatiallight modulators, which have the display control 108, line memorybuffers 110, and the pulse width modulation array 112 fabricated on aseparate substrate. Further, fabricating the second layer of theelectrode array 104 and the third layer of the control circuitry 106 ona single substrate 107 provides the advantage of simple and cheapfabrication, and a compact final product.

After the layers 103 and 107 are fabricated, they are bonded together toform the SLM 100. The first layer with the mirror array 103 covers thesecond and third layers 104 and 106, collectively 107. The area underthe mirrors 202 in the mirror array 103 determines how much room thereis beneath the first layer 103 for the electrodes 126, and addressingand control circuitry 106. There is limited room beneath the micromirrors 202 in the mirror array 103 to fit the electrodes 126 and theelectronic components that form the display control 108, line memorybuffers 110, and the pulse width modulation array 112. The presentinvention uses fabrication techniques that allow the creation of smallfeature sizes, such as processes that allow fabrication of features of0.18 microns, and processes that allow the fabrication of features of0.13 microns or smaller. Conventional spatial light modulators are madethrough fabrication processes that do not allow such small features.Typically, conventional spatial light modulators are made throughfabrication processes that limit feature size to approximately 1 micronor larger. Thus, the present invention allows the fabrication of manymore circuit devices, such as transistors, in the limited area beneaththe micro mirrors of the mirror array 103. This allows integration ofitems such as the display control 108, line memory buffers 110, and thepulse width modulation array 112 on the same substrate as the electrodes126. Including such control circuitry 106 on the same substrate 107 asthe electrodes 126 improves the performance of the SLM 100. This allowsintegration of many more items, such as display control 108, line memorybuffers 110 and pulse width modulation array 112 on the same substrateas the electrodes 126, in the limited area beneath the micro mirrors inthe micro mirror array 103. Including such control circuitry 106 on thesame substrate 107 as the electrodes 126 improves the performance of theSLM 100. In other embodiments, various combinations of the electrodes126 and components of the control circuitry may be fabricated ondifferent substrates and electrically connected.

In other embodiments, various combinations of the electrodes 126 andcomponents of the control circuitry may be fabricated on differentsubstrates and electrically connected.

The Mirror:

FIG. 2 a is a perspective view of one embodiment of a single micromirror 202, and FIG. 2 b is a more detailed perspective view of a corner236 of the micro mirror 202 shown in FIG. 2 a. In one preferredembodiment, the micro mirror 202 includes at least one mirror plate 204,a hinge 206, a connector 216 and a reflective surface 203. In analternate embodiment, the micro mirror 202 further includes a spacersupport frame 210 for supporting the mirror plate 204, hinge 206,reflective surface 203 and connector 216. Preferably, the mirror plate204, hinge 206, connector 216 and spacer support frame 210 arefabricated from a wafer of a single material, such as single crystalsilicon. Thus, the first substrate 105 shown in FIG. 1 in such anembodiment is a wafer of single crystal silicon. Fabricating the micromirror 202 out of a single material wafer greatly simplifies thefabrication of the mirror 202. Further, single crystal silicon can bepolished to create smooth mirror surfaces that have an order ofmagnitude smoother surface roughness than those of deposited films.Mirrors 202 fabricated from single crystal silicon are mechanicallyrigid, which prevents undesired bending or warping of the mirrorsurface, and hinges fabricated from single crystal silicon are stronger,more reliable and suffer from virtually no memory effect, fracturesalong grain boundaries or fatigue, all of which are common with hingesmade of from many other materials used in micro mirror arrays. In otherembodiments, other materials may be used instead of single crystalsilicon. One possibility is the use of another type of silicon (e.g.polysilicon, or amorphous silicon) for the micro mirror 202, or evenmaking the mirror 202 completely out of a metal (e.g. an aluminum alloy,or tungsten alloy). Also, use of a single substrate as in the presentinvention avoids the use of multi-layer thin film stacking and etchingprocesses and techniques.

As shown in FIGS. 2 a-b, 3, 4 a-b, 7 a and 8 and as described above, themicro mirror 202 has a mirror plate 204. This mirror plate 204 is theportion of the micro mirror 202 that is coupled to the hinge 206 by aconnector 216 and selectively deflected by applying a voltage biasbetween the mirror 202 and a corresponding electrode 126. The mirrorplate 204 in the embodiment shown in FIG. 3 includes triangular portions204 a and 204 b. In the embodiment shown in FIGS. 12 a, 12 b and 13, themirror plate 204 is substantially square in shape, and approximatelyfifteen microns by fifteen microns, for an approximate area of 225square microns, although other shapes and sizes are also possible. Themirror plate 204 has an upper surface 205 and a lower surface 201. Theupper surface 205 is preferably a highly smooth surface, with a measureof roughness of less than 2 angstroms root mean square and preferablyconstituting a large proportion of the surface area of the micro mirror204. On the upper surface 205 of the mirror plate 204 and above aportion of the hinge 206 is deposited a reflective surface 203, such asaluminum or any other highly reflective material. Preferably thisreflective surface 203 has a thickness of 300 A or less. The thinness ofthe reflective surface or material 203 ensures that it inherits theflat, smooth surface of the upper surface 205 of the mirror plate 204.This reflective surface 203 has an area greater than the area of theupper surface 205 of the mirror plate 204, and reflects light from alight source at an angle determined by the deflection of the mirrorplate 204. Note that a torsion spring hinge 206 is formed substantiallybeneath the upper surface 205 of the mirror plate 204 and issubstantially concealed by the reflective surface 203 that is depositedon the upper surface 205 and above a portion of the hinge 206. Thedifference between FIGS. 2 a and 3 is that FIG. 2 a illustrates a mirrorplate 204 with the reflective surface 203 added on the upper surface 205and substantially concealing the hinge 206, whereas FIG. 3 illustratesthe mirror plate 204 without a reflective surface 203 and, therefore,revealing the hinge 206. Because the hinge 206 and the mirror plate 204are in the same substrate 105 and, as illustrated in FIGS. 7 a and 7 b,the center height 796 of the hinge 206 is substantially coplanar 795with the center height 795 or 797 of the mirror plate 204, there is notranslational movement or displacement as the mirror 202 rotates aboutthe longitudinal axis of the hinge 206. With no translationaldisplacement, the gap between the mirror plate 204 and the supportspacer walls of the spacer support frame 210 need only be limited by thelimitations of the fabrication technology and process, typically lessthan 0.1 micron. The close spacing of the mirror plate 204 and thehiding of the hinge 206 substantially beneath the reflective surface 203allow for a high fill ratio for the micro mirror array 103, improvedcontrast ratio, minimized scattering and diffraction of light, andvirtual elimination of light passing through the micro mirror array 103to strike the circuitry on the second substrate 107.

As illustrated in FIGS. 2 a-b, 3, 4 a-b, 7 a, 8, 12 a, 12 b and 13, themirror plate 204 is connected to a torsion spring hinge 206 by aconnector 216. The torsion spring hinge 206 is connected to a spacersupport frame 210, which holds the torsion spring hinge 206, theconnector 216 and the mirror plates 204 in place. The hinge 206 includesa first arm 206 a and a second arm 206 b. Each arm, 206 a and 206 b, hastwo ends, one end connected to the spacer support frame 210 and theother end connected to the connector 216 as shown in FIGS. 3 and 13.Other springs, hinges and connection schemes among the mirror plate 204,the hinge 206, and spacer support frame 210 could also be used inalternative embodiments. As most clearly illustrated in FIGS. 3 and 4 a,the torsion hinge 206 is preferably diagonally oriented (e.g., at a 45degree angle) with respect to the spacer support wall 210, and dividesthe mirror plate 204 into two parts, or sides: a first side 204 a and asecond side 204 b. As shown in FIG. 7 b, two electrodes 126 areassociated with the mirror 202, one electrode 126 a for a first side 204a and one electrode 126 b for a second side 204 b. This allows eitherside 204 a or 204 b to be attracted to one of the electrodes 126 a or126 b beneath and pivot downward and provides wide range of angularmotion. The torsion spring hinge 206 allows the mirror plate 204 torotate relative to the spacer support frame 210 about a longitudinalaxis of the hinge 206 when a force such as an electrostatic force isapplied to the mirror plate 204 by applying a voltage between the mirror202 and the corresponding electrode 126. This rotation produces theangular deflection for reflecting light in a selected direction. Sincethe hinge 206 and the mirror plate 204 are in the same substrate 105and, as illustrated in FIGS. 7 a and 7 b, the center height 796 of thehinge 206 is substantially coplanar 795 with the center height 795 or797 of the mirror plate 204, the mirror 202 moves about the hinge 206 inpure rotation with no translational displacement. In one embodiment, asillustrated in FIGS. 7 a and 8, the torsion spring hinge 206 has a width222 that is smaller than the depth 223 of the hinge 206 (perpendicularto the upper surface 205 of the mirror plate 204). The width 222 of thehinge 206 is preferably between about 0.12 microns to about 0.2 microns,and the depth 223 is preferably between about 0.2 microns and about 0.3microns.

As shown in FIGS. 2 a-b, 3, 4 a-b, 6 and 7 a, the spacer support frame210 positions the mirror plate 204 at a pre-determined distance abovethe electrodes 126 and addressing circuitry so that the mirror plate 204may deflect downward to a predetermined angle. The spacer support frame210 includes spacer support walls that are preferably formed from thesame first substrate 105 and preferably positioned orthogonally asillustrated in FIGS. 2 a, 4 a, 12 a and 13. These walls help define theheight of the spacer support frame 210. The height of the spacer supportframe 210 is chosen based on the desired separation between the mirrorplates 204 and the electrodes 126, and the topographic design of theelectrodes. A larger height allows more deflection of the mirror plate204, and a higher maximum deflection angle. A larger deflection anglegenerally provides a higher contrast ratio. In one embodiment, thedeflection angle of the mirror plate 204 is 12 degrees. In a preferredembodiment, the mirror plate 204 can rotate as much as 90 degrees ifprovided sufficient spacing and drive voltage. The spacer support frame210 also provides support for the hinge 206 and spaces the mirror plate204 from other mirror plates 204 in the mirror array 103. The spacersupport frame 210 has a spacer wall width 212, which, when added to agap between the mirror plate 204 and the support frame 210, issubstantially equal to the distance between adjacent mirror plates 204of adjacent micro mirrors 202. In one embodiment, the spacer wall width212 is 1 micron or less. In one preferred embodiment, the spacer wallwidth 212 is 0.5 microns or less. This places the mirror plates 204closely together to increase the fill ratio of the mirror array 103.

In some embodiments, the micro mirror 202 includes elements 405 a or 405b that stop the deflection of the mirror plate 204 when the plate 204has deflected downward to a predetermined angle. Typically, theseelements may include a motion stop 405 a or 405 b and landing tip 710 aor 710 b. As shown in FIGS. 4 a, 6, 7 a, 7 b, 8, 13 and 15, when themirror surface 204 deflects, the motion stop 405 a or 405 b on themirror plate 204 contacts the landing tip 710 (either 710 a or 710 b).When this occurs, the mirror plate 204 can deflect no further. There areseveral possible configurations for the motion stop 405 a or 405 b andthe landing tip 710 a or 710 b. In the embodiments illustrated in FIGS.4 a, 6, 7 a, 8, 13 and 15, the motion stop is a cylindrical column ormechanical stop 405 a or 405 b attached to the lower surface 201 of themirror plate 204, and a landing tip 710 is a corresponding circular areaon the second substrate 107. In the embodiment shown in FIGS. 7 a, 7 band 8, landing tips 710 a and 710 b are electrically connected to thespacer support frame 210, and hence has zero voltage potentialdifference relative to the motion stop 405 a or 405 b to preventsticking or welding of the motion stop 405 a or 405 b to the landing tip710 a or 710 b, respectively. Thus, when the mirror plate 204 is rotatedrelative to the spacer support frame 210 beyond a predetermined angle(as determined by the length and location of the mechanical stop 405 aor 405 b), the mechanical motion stop 405 a or 405 b will come intophysical contact with the landing tip 710 a or 710 b, respectively, andprevent any further rotation of the mirror plate 204.

In a preferred embodiment, a motion stop 405 a or 405 b is fabricatedfrom the first substrate 105 and from the same material as the mirrorplate 204, hinge 206, connector 216 and spacer support frame 210. Thelanding tip 710 a or 710 b is also preferably made of the same materialas the motion stop 405 a or 405 b, mirror plate 204, hinge 206,connector 216 and spacer support frame 210. In embodiments where thematerial is single crystal silicon, the motion stop 405 a or 405 b andlanding tip 710 a or 710 b are therefore made out of a hard materialthat has a long functional lifetime, which allows the mirror array 103to last a long time. Further, because single crystal silicon is a hardmaterial, the motion stop 405 a or 405 b and landing tip 710 a or 710 bcan be fabricated with a small area where the motion stop 450 a or 405 bcontacts the landing tip 710 a or 710 b, respectively, which greatlyreduces sticking forces and allows the mirror plate 204 to deflectfreely. Also, this means that the motion stop 405 a or 405 b and landingtip 710 a or 710 b remain at the same electrical potential, whichprevents sticking that would occur via welding and charge injectionprocesses were the motion stop 405 a or 405 b and landing tip 710 a or710 b at different electrical potentials. The present invention is notlimited to the elements or techniques for stopping the deflection of themirror plate 204 described above. Any elements and techniques known inthe art may be used.

FIG. 4 a is a perspective view illustrating the underside of a singlemicro mirror 202, including the support walls 210, the mirror plate 204(including sides 204 a and 204 b and having an upper surface 205 and alower surface 201), the hinge 206, the connector 216 and mechanicalstops 405 a and 405 b. FIG. 4 b is a more detailed perspective view of acorner 237 of the micro mirror 202 shown in FIG. 4 a.

FIG. 5 is a perspective view showing the top and sides of a micro mirrorarray 103 having nine micro mirrors 202-1 through 202-9. While FIG. 5shows the micro mirror array 103 with three rows and three columns, fora total of nine micro mirrors 202, micro mirror arrays 103 of othersizes are also possible. Typically, each micro mirror 202 corresponds toa pixel on a video display. Thus, larger arrays 103 with more micromirrors 202 provide a video display with more pixels.

As shown in FIG. 5, the surface of the micro mirror array 103 has alarge fill ratio. That is, most of the surface of the micro mirror array103 is made up of the reflective surfaces 203 of the micro mirrors 202.Very little of the surface of the micro mirror array 103 isnon-reflective. As illustrated in FIG. 5, the non-reflective portions ofthe micro mirror array 103 surface are the areas between the reflectivesurfaces 203 of the micro mirrors 202. For example, the width of thearea between mirror 202-1 and 202-2 is determined by the spacer supportwall width 212 and the sum of the width of the gaps between the mirrorplates 204 of mirrors 202-1 and 202-2 and the spacer support wall 210.Note that, while the single mirror 202 as shown in FIGS. 2 a, 2 b, 3, 4a and 4 b has been described as having its own spacer support frame 210,there are not typically two separate abutting spacer walls 210 betweenmirrors such as mirrors 202-1 and 202-2. Rather, there is typically onephysical spacer wall of the support frame 210 between mirrors 202-1 and202-2. Since there is no translational displacement upon deflection ofthe mirror plates 204, the gaps and the spacer wall width 212 can bemade as small as the feature size supported by the fabricationtechnique. Thus, in one embodiment, the gaps are 0.2 micron, and inanother embodiment the gaps are 0.13 micron or less. As semiconductorfabrication techniques allow smaller features, the size of the spacerwall 210 and the gaps can decrease to allow higher fill ratios.Embodiments of the present invention allow high fill ratios. In apreferred embodiment, the fill ratio is 96% or even higher.

FIG. 6 is a perspective view showing the bottom and sides of the micromirror array 103 having nine micro mirrors. As shown in FIG. 6, thesupport walls of the spacer support frame 210 of the micro mirrors 202define cavities beneath the mirror plates 204. These cavities provideroom for the mirror plates 204 to deflect downwards, and also allowlarge areas beneath the mirror plates 204 for placement of the secondlayer 104 with the electrodes 126, and/or the third layer with thecontrol circuitry 106. FIG. 6 also shows the lower surface 201 of themirror plates 204 (including sides 204 a and 204 b), as well as thebottoms of the spacer support frame 210, the torsion spring hinges 206,the connectors 216, and the motion stops 405 a and 405 b.

As seen in FIGS. 5 and 6, very little light that is normal to the mirrorplate 204 can pass beyond the micro mirror array 103 to reach any theelectrodes 126 or control circuitry 106 beneath the micro mirror array103. This is because the spacer support frame 210 and the reflectivesurface 203 on the upper surface 205 of the mirror plate 204 and above aportion of the hinge 206 provide near complete coverage for thecircuitry beneath the micro mirror array 103. Also, since the spacersupport frame 210 separates the mirror plate 204 from the circuitrybeneath the micro mirror array 103, light traveling at anon-perpendicular angle to the mirror plate 204 and passing beyond themirror plate 204 is likely to strike a wall of the spacer support frame210 and not reach the circuitry beneath the micro mirror array 103.Since little intense light incident on the mirror array 103 reaches thecircuitry, the SLM 100 avoids problems associated with intense lightstriking the circuitry; These problems include the incident lightheating up the circuitry, and the incident light photons chargingcircuitry elements, both of which can cause the circuitry tomalfunction.

FIG. 12 a is a perspective view of a micro mirror 202 according to analternate embodiment of the invention, and FIG. 12 b is a more detailedperspective view of a corner 238 of the micro mirror 202. The torsionhinge 206 in this embodiment is parallel to a spacer support wall of thespacer support frame 210. The mirror plate 204 is selectively deflectedtoward the electrode by applying a voltage bias between the mirror plate204 and a corresponding electrode 126. The embodiment illustrated inFIG. 12 a provides for less total range of angular motion from the samesupport wall height than the mirror 202 illustrated in FIGS. 2 a and 2 bwith the diagonal hinge 206. Nevertheless, like the embodimentillustrated in FIGS. 2 a and 2 b, the hinge 206 in the embodimentillustrated in FIGS. 12 a and 12 b is below the upper surface 205 of themirror plate 204 and is concealed by a reflective surface 203, resultingin an SLM 100 with high fill ratio, high optical efficiency, highcontrast ratio, low diffraction and scattering of light and reliably andcost-effective performance. FIG. 12 b is a more detailed perspectiveview of a corner of the micro mirror 202 and illustrates the mirrorplate 204, hinge 206, support wall of the spacer support frame 210 andreflective surface 203. FIG. 13 illustrates the underside of a singlemicro mirror 202 including hinge 206, connector 216 and motion stop405a. In other embodiments, the hinge 206 may be substantially parallelto one of the sides of the mirror plate 204 and still be positioned todivide the mirror plate 204 into two parts 405 a and 405 b. FIGS. 14 and15 provide perspective views of a micro mirror array composed ofmultiple micro mirrors 202 as described in FIGS. 12 a, 12 b and 13.

Fabrication of the Spatial Light Modulator:

FIG. 9 a is a flowchart illustrating one preferred embodiment of how thespatial light modulator 100 is fabricated. FIGS. 9 b through 9 m arediagrams illustrating a preferred method the fabrication of the spatiallight modulator 100 in more detail, and FIGS. 16 a through 16 e, alongwith FIGS. 9 e through 9 m are diagrams illustrating an alternativepreferred method of fabrication.

Referring to FIG. 9 a, a mask is generated 902 to initially partiallyfabricate the micro mirrors 202. A preferred embodiment of this mask1000 is illustrated in FIG. 10 and defines what will be etched 904 fromone side of the first substrate 105 to form the cavities on theunderside of the micro mirror array 103 that define the spacer supportframes 210 and support walls. As shown in FIG. 10, area 1004 of the mask1000 is a photoresist material or other dielectric material, such assilicon oxide or silicon nitride, that will prevent the first substrate105 beneath from being etched. The areas 1002 in FIG. 10 are areas ofexposed substrate 105 that will be etched to form the cavities. Theareas 1004 that are not etched remain, and form the spacer support wallsin the spacer support frame 210.

In one embodiment, the first substrate 105 is etched in a reactive ionetch chamber flowing with SF6, HBr, and oxygen gases at flow rates of100 sccm, 50 sccm, and 10 sccm respectively. The operating pressure isin the range of 10 to 50 mTorr, the bias power is 60 W, and the sourcepower is 300 W. In another embodiment, the first substrate 105 is etchedin a reactive ion etch chamber flowing with C12, HBr, and oxygen gasesat flow rates of 100 sccm, 50 sccm, and 10 sccm respectively. In theseembodiments, the etch processes stop when the cavities are about 3-4microns deep. This depth is measured using in-situ etch depthmonitoring, such as in-situ optical interferometer techniques, or bytiming the etch rate.

In another embodiment, the cavities are formed in the wafer by ananisotropic reactive ion etch process. The wafer is placed in a reactionchamber. SF6, HBr, and oxygen gases are introduced into the reactionchamber at a total flow rate of 100 sccm, 50 sccm, and 20 sccmrespectively. A bias power setting of 50 W and a source power of 150 Ware used at a pressure of 50 mTorr for approximately 5 minutes. Thewafers are then cooled with a backside helium gas flow of 20 sccm at apressure of 1 mTorr. In one preferred embodiment, the etch processesstop when the cavities are about 3-4 microns deep. This depth ismeasured using in-situ etch depth monitoring, such as in-situ opticalinterferometer techniques, or by timing the etch rate.

Standard techniques, such as photolithography, can be used to generatethe mask on the first substrate 105. As mentioned previously, in onepreferred embodiment the micro mirrors 202 are formed from a singlematerial, such as single crystal silicon. Thus, in one preferredembodiment, the first substrate 105 is a wafer of single crystalsilicon. Note that typically multiple micro mirror arrays 103, to beused in multiple SLMs 100, are fabricated on a single wafer, to beseparated later. The structures fabricated to create the micro mirrorarray 103 are typically larger than the features used in CMOS circuitry,so it is relatively easy to form the micro mirror array 103 structuresusing known techniques for fabricating CMOS circuitry.

FIG. 9 b is a cross sectional view that illustrates the first substrate105 prior to fabrication. Substrate 105 initially includes a devicelayer 1615 having a pre-determined thickness, an insulating oxide layer1610 and a handling substrate 1605. The device layer 1615 is located ona first side of the substrate 105 and the handling substrate 1605 islocated on a second side of the substrate 105. In a preferredembodiment, the device layer 1615 is made of a single crystal siliconmaterial and has a thickness of between about 2.0 microns to about 3.0microns. Substrate 105 as shown in FIG. 9 b is fabricated using anystandard silicon-on-insulator (“SOI”) process known in the art or may bepurchased from silicon wafer suppliers such as Soitec, Inc., Shinetsu,Inc. or Silicon Genesis, Inc.

Referring to FIG. 9 b, a shallow cavity 198 is etched into the devicelayer 1615 on the second side of the first substrate 105. The details ofthe etch are described in paragraphs above, specifically paragraphs59-61 above. The etch depth is approximately the distance 197 betweenthe end of the motion stops 405 a and 405 b (to be formed) and thesecond substrate 107 (after the second substrate 107 has been bonded tothe first substrate 105, as discussed below). The distance 197 of thisdepth determines the length of the motion stops 405 a and 405 b thatwill ultimately be fabricated in a subsequent etch step. As shown inFIGS. 9 c and 9 d, two motion stops 405 a and 405 b are etched from thedevice layer 1615 of the first substrate 105, preferably usingphotolithography techniques. Again, the details of the etch aredescribed in the above in paragraphs 59-61.

FIGS. 16 a-16 e illustrate an alternative method for fabricating a firstsubstrate 105 with cavities. FIG. 16 a presents a cross sectional viewof the first substrate 105 prior to fabrication. Like the firstsubstrate 105 in FIG. 9 b, the first substrate 105 in FIG. 16 ainitially includes a device layer 1615 having a pre-determinedthickness, an insulating oxide layer 1610 and a handling substrate 1605.The device layer 1615 is located on a first side of the substrate 105and the handling substrate 1605 is located on a second side of thesubstrate 105. Such first substrates 105 may be fabricated using anystandard silicon-on-insulator process known in the art or may bepurchased from silicon wafer suppliers such as the ones described above.In this preferred embodiment, the device layer 1615 is made of a singlecrystal silicon material, and the top portion 1615 a of the device layer1615, as shown in FIG. 16 e has a pre-determined thickness, preferablybetween 0.2 microns to 0.4 microns. The thickness of this top portion1615 a of the device layer will ultimately be the approximate thicknessof the mirror plate 204 eventually fabricated.

Referring to FIG. 16 b, after obtaining (either fabricating orpurchasing) a first substrate 105 having the layers 1610 and 1615 andsubstrate 1605 described in the preceding paragraph, a dielectricmaterial 1620, such as silicon oxide, is deposited on the device layer1615 of the first substrate 105.

The dielectric material 1620 is then etched using standardphotolithography and etching techniques known in the art to createopenings 1625 and 1626 at pre-determined positions where the supportwalls of the spacer support frame 210 will be located. As shown in FIG.16 c, the etched dielectric material 1620 creates a mask and openings1625 and 1626 for subsequent process steps.

In the preferred embodiment illustrated in FIG. 16 c, a single crystalsilicon material 1627 and 1628 is grown in the openings 1625 and 1626 ofthe dielectric material 1620 using an epitaxial growth process with thesingle crystal silicon material in device layer 1615 serving as the“seed” for the epitaxial growth. Typically, the material grown in theopenings 1627 and 1628 is the same material as the device layer 1615 (orseed) and has the same crystal structure as the device layer 1615. Inthe embodiment shown in FIG. 16 c, the single crystal silicon materialgrown 1627 and 1628 will ultimately become the support walls of thespacer support frame 210 for the micro mirror array 103.

Finally, the dielectric material 1620 is removed resulting in thestructure shown in FIG. 16 e. The result is a first substrate 105 havingstructure identical to the first substrate 105 shown in FIG. 9 d, exceptthe structure in FIG. 16 e does not have the motion stops 405 a or 405b. However, given the discussion above, one of ordinary skill in the artwould know how to add the motion stops 405 a or 405 b to the structureshown in FIG. 16 e. For example, such motion stops 405 a and 405 b maybe etched and grown epitaxially just as the support walls of the spacersupport frame 210. Thus, FIGS. 16 a through 16 e provide an alternativemethod for fabricating cavities in a first substrate 105 with precisecontrol over the thickness of the top portion 1615 a of the device layer1615 of the first substrate 105. Completion of the steps illustrated inFIGS. 9 e through 9 m will result in the fabrication of a hidden hingehigh fill ratio reflective spatial light modulator 100.

Returning to FIG. 9 a, separately from the fabrication of the cavitiesin the first substrate 105, some or all of the electrodes 126,addressing and control circuitry 106 are formed 906 on a first side 703of the second substrate 107 as shown in FIGS. 9 a and 9 e. The secondsubstrate 107 may be a transparent material, such as quartz, or anothermaterial. If the second substrate is quartz, transistors may be madefrom polysilicon, as compared to crystalline silicon. The circuitry ispreferably formed 906 using standard CMOS fabrication technology. Forexample, in one embodiment, the control circuitry 106 formed orfabricated 906 on the second substrate 107 includes an array of memorycells, row address circuitry, and column data loading circuitry. Thereare many different methods to make electrical circuitry that performsthe addressing function. The DRAM, SRAM, and latch devices commonlyknown may all perform the addressing function. Since the mirror plate204 area may be relatively large on semiconductor scales (for example,the mirror plate 204 may have an area of 225 square microns), complexcircuitry can be manufactured beneath micro mirror 202. Possiblecircuitry includes, but is not limited to, storage buffers to store timesequential pixel information, circuitry to compensate for possiblenon-uniformity of mirror plate 204 to electrode 126 separation distancesby driving the electrodes 126 at varying voltage levels, and circuitryto perform pulse width modulation conversions.

This control circuitry 106 is covered with a passivation layer such assilicon oxide or silicon nitride. Next, a metallization layer isdeposited. This metallization layer is patterned and etched to defineelectrodes 126, as well as a bias/reset bus in one embodiment. Theelectrodes 126 are placed during fabrication so that one or more of theelectrodes 126 corresponds to each micro mirror 202. As with the firstsubstrate 105, typically multiple sets of circuitry to be used inmultiple SLMs 100 are formed 906 on the second substrate 107 to beseparated later.

The first substrate 105 illustrated in FIG. 9 d or FIG. 16 e is thenbonded 910 to the second substrate 107, as shown in FIGS. 9 a and 9 e.As shown in FIG. 9 f, the first substrate 105 has a top layer 905 on theside opposite the second substrate 107. The side of the first substrate105 with the cavities and the motion stops 405 a and 405 b is bonded 910to the side of the second substrate that has the electrodes 126. Thesubstrates 105 and 107 are aligned so that the electrodes on the secondsubstrate 107 are in the proper position to control the deflection ofthe micro mirrors 202 in the micro mirror array 103. In one embodiment,the two substrates 105 and 107 are optically aligned using doublefocusing microscopes by aligning a pattern on the first substrate 105with a pattern on the second substrate 107, and the two substrates 105and 107 are bonded 910 together by low temperature bonding methods suchas anodic or eutectic bonding. This bonding 910 in a preferredembodiment may occur at any temperature lower than 400 degrees Celsiusincluding at room temperature. For example, thermoplastics or dielectricspin glass bonding materials can be used, so that the substrates 105 and107 are bonded thermal-mechanically. The bonding 910 ensures a goodmechanical adhesion between the first substrate 105 and the secondsubstrate 107 and may occur at room temperature. FIG. 9 e is a crosssectional view that shows the first substrate 105 and the secondsubstrate 107 bonded together. There are many possible alternateembodiments to the fabrication of the second substrate 906.

After bonding 910 the first substrate 105 and the second substrate 107together, the top layer 905 of the first substrate 105 is thinned 912 asillustrated in FIGS. 9 f and 9 a to a predetermined, desired thickness.First, the handling substrate 1605 shown in FIG. 9 f or FIG. 16 e isremoved, typically by grinding and/or etching, and then the oxide layer1610 is stripped away using any technique known in the art forperforming oxide stripping. The oxide layer 1610 serves as a stop markerfor the thinning step 912 and is placed within the first substrate 105to produce a thinned first substrate 105 of desired thickness. Thethinning process may involve grinding and/or etching, preferably asilicon back etch process such as wet etch or plasma etch. The result isan upper surface 205 of the first substrate 105 that will ultimatelyform the upper surface 205 of the mirror plates as shown in FIGS. 3, 7a, 8 and 9 m. The final thickness of the resulting first substrate 105is several microns in a preferred embodiment.

Next, a hinge 206 is etched 913 using a two step etch process. First, asshown in FIG. 9 g, the upper surface 205 of the first substrate 105 isetched to form a recess 910. This ensures that the hinge 206 to beformed in the recess 910 is positioned substantially below the uppersurface 205 of the first substrate 105, which will be the upper surface205 of the mirror plate 204 at the end of the fabrication process.Second, as shown in FIGS. 9 h and 9 a, the first substrate 105 is etchedagain to substantially release the hinge 206 from the mirror plateportion 915 of the first substrate 105. As shown in the embodimentsillustrated in FIGS. 3, 4 a, 4 b, 12 a, 12 b and 13, the ends of thehinge 206 remain connected to the spacer support walls of the spacersupport frame 210. The mirror plate portion 915 of the first substrate105 will form the mirror plate 204 of the micro mirror 202.

In one embodiment, the hinge 206 is etched in a decoupled plasma sourcechamber flowing with Cl₂, O₂, and N₂ gases at flow rates of 100 sccm, 20sccm, and 50 sccm respectively. The operating pressure is in the rangeof 4 to 10 mTorr, the bias power is 40 W, and the source power is 1500W. The depth is measured using in-situ etch depth monitoring, such asin-situ optical interferometer techniques, or by timing the etch rate.

A sacrificial material 920, such as photoresist, is then deposited 914onto the first substrate 105, filling the gaps on and around the hinge206, including between the hinge 206 and the mirror plate portion 915 ofthe first substrate 105, and on the upper surface 205 of the firstsubstrate 105, as shown in FIGS. 9 i and 9 a. The photoresist can besimply spun onto the substrate.

As illustrated in FIGS. 9 j and 9 a, the first substrate. 105 with thesacrificial material 920 is then planarized 915 using either a etch backstep, a chemical mechanical processing (“CMP”) process, or any otherprocess known in the art. This process ensures that sacrificial material920 is only left on and around the hinge, but not on the upper surface205 of the first substrate 105. Note that, in the planarization step,since the sacrificial material 920 is removed from the upper surface 205of the first substrate 105, removal is relatively easy.

A reflective surface 203 is deposited 916 onto the planarized surface(including the upper surface 205 of the mirror plate 204 and the portionabove a portion of the hinge 206 covered with sacrificial material 920)as shown in FIGS. 9 k and 9 a to create a reflective surface 203. Asnoted above, the reflective surface 203 has an area greater than thearea of the upper surface 205 of the mirror plate 204. The reflectivesurface is preferably aluminum or any other reflective material known inthe art, and preferably has thickness of 300 A or less. The reflectivesurface 203 covers the upper surface 205 of the first substrate 105 andthe area above a portion of the hinge 206. FIG. 9 k is a cross sectionalview that shows a deposited reflective surface 203. The thinness of thereflective surface 203 ensures that it inherits the flat, smoothcharacteristics of the upper surface 205 of the mirror plate 204.

As shown in FIGS. 9 l and 9 a, the reflective surface 203 and the mirrorplate portion 915 are etched 917 to release the mirror plate 204 fromthe mirror plate portion 915 of the first substrate 105. Preferably, theetch of the reflective surface 203 and the mirror plate portion 915 isconducted in the same chamber.

In a preferred embodiment in which the reflective surface 203 is analuminum material, the etching 917 of the reflective surface 203 occursin a decoupled plasma source chamber flowing with Cl₂, BCl₃, and N₂gases at flow rates of 40 sccm, 40 sccm, and 10 sccm respectively. Theoperating pressure is 10 mTorr, the bias power is 75 W, and the sourcepower is 800 W. The etch depth is measured using in-situ etch depthmonitoring, such as in-situ optical interferometer techniques, or bytiming the etch rate. After the reflective surface 203 of aluminum isetched 917, the underlying mirror plate portion 915 made of silicon, ina preferred embodiment, is then etched 917 in a decoupled plasma sourcechamber flowing with HBr, Cl₂, and O₂ gases at flow rates of 90 sccm, 55sccm, and 5 sccm respectively. The operating pressure is 5 mTorr, thebias power is 75 W, and the source power is 500 W. The depth is measuredusing in-situ etch depth monitoring, such as in-situ opticalinterferometer techniques, or by timing the etch rate.

After etch 917 of the reflective surface 203 and the mirror plateportion 915, the mirror plate 204 is released; however, the hinge 206 isstill fixed in place by the sacrificial material 920. As a result, themirror plate 204 and the micro mirror as a whole cannot rotate aroundthe hinge 206 yet, which ensures the survivability of the device insubsequent process steps.

The final step in the fabrication of the micro mirror 202 is to remove918 the remaining sacrificial material 920 on and around the hinge 206.Note that removal of the remaining sacrificial material 920 on andaround the hinge 206 is relatively easy since the sacrificial material920 is not underneath the mirror plate 204 or mirror 202. A dry process,such as a plasma etch, is preferred due to a stiction problem associatedwith a wet process. In one embodiment, the sacrificial material 920 is aphotoresist material that is etched away in an 02 plasma chamber. Afterthe sacrificial material 920 is removed 918, the hinge 206 is releasedand the mirror plate 204 is free to rotate about the hinge 206. Byfollowing the above fabrication steps, the result is a hinge 206 that isformed substantially beneath the upper surface 205 of the mirror plate204 and is concealed by the reflective surface 203 that is deposited onthe upper surface 203 of the mirror plate 204 and above a portion of thehinge 206.

In some embodiments, the micro-mirror array 103 is protected by a pieceof glass or other transparent material. In one embodiment, duringfabrication of the micro mirror array 103, a rim is left around theperimeter of each micro mirror array 103 fabricated on the firstsubstrate 105. To protect the micro mirrors 202 in the micro mirrorarray 103, a piece of glass or other transparent material is bonded 919to the rim as described in FIG. 9 a. This transparent material protectsthe micro mirrors 202 from physical harm. In one alternative embodiment,lithography is used to produce an array of rims in a layer ofphotosensitive resin on a glass plate. Then epoxy is applied to theupper edge of the rims, and the glass plate is aligned and attached tothe completed reflective SLM 100.

As discussed above, multiple SLMs 100 may be fabricated from the twosubstrates 105 and 107. Multiple micro mirror arrays 103 may befabricated in the first substrate 105, and multiple sets of circuitrymay be fabricated or formed in the second substrate 107. Fabricatingmultiple SLMs 100 increases the efficiency of the spatial lightmodulator 100 fabrication process. However, if multiple SLMs 100 arefabricated at once, they must be separated into the individual SLMs 100.There are many ways to separate each spatial light modulator 100 andready it for use. In a first method, each spatial light modulator 100 issimply die separated 920 from the rest of the SLMs 100 on the combinedsubstrates 105 and 107. Each separated spatial light modulator 100 isthen packaged 922 using standard packaging techniques.

In a second method, a wafer-level-chip-scale packaging is carried out toencapsulate each SLM 100 into separate cavities and form electricalleads before the SLMs 100 are separated. This further protects thereflective deflectable elements and reduces the packaging cost. In oneembodiment of this method as illustrated in FIG. 9 a, the backside ofthe second substrate 107 is bonded 924 with solder bumps. The backsideof the second substrate 107 is then etched 926 to expose metalconnectors that were formed during fabrication of the circuitry on thesecond substrate 107. Next, conductive lines are deposited 928 betweenthe metal connectors and the solder bumps to electrically connect thetwo. Finally, the multiple SLMs are die separated 930.

FIG. 11 is a perspective view of one embodiment of the electrodes 126formed on the second substrate 107. In this embodiment, each micromirror 202 has a corresponding electrode 126. The electrodes 126 in thisillustrated embodiment are fabricated to be higher than the rest of thecircuitry on the second substrate 107. In a preferred embodiment, theelectrodes 126 are located on the same level as the rest of thecircuitry on the second substrate 107. In another embodiment, theelectrodes 126 extend above the circuitry. In one embodiment of theinvention, the electrodes 126 are individual aluminum pads that fitunderneath the micro mirror plate. The shape of the electrodes dependsupon the embodiment of the micro mirror 202. For example, in theembodiment shown in FIGS. 2 a, 2 b and 3, there are preferably twoelectrodes 126 underneath the mirror 202 with each electrode 126 havinga triangular shape as shown in FIG. 7 b. In the embodiment shown inFIGS. 12 a, 12 b and 13, there is preferably a single, square electrode126 underneath the mirror 202. These electrodes 126 are fabricated onthe surface of the second substrate 107. The large surface area of theelectrodes 126 in this embodiment results in relatively low addressingvoltages required to pull the mirror plate 204 down onto the mechanicalstops, to cause the full pre-determined angular deflection of the mirrorplates 204.

Operation:

In operation, individual reflective micro mirrors 202 are selectivelydeflected and serve to spatially modulate light that is incident to andreflected by the mirrors 202.

FIGS. 7 a and 8 illustrate a cross-sectional view of the micro mirror202 shown along dotted line 250 in FIG. 2 a. Note that thiscross-sectional view is offset from the center diagonal of the micromirror 202, thereby illustrating the outline of the hinge 206. FIG. 7 cillustrates a different cross-section view of the micro mirror 202 shownalong dotted line 250 in FIG. 2 a. Note that this cross-sectional viewis along the center diagonal, perpendicular to the hinge 206. FIG. 7 cillustrates the connector 216 in relation to the mirror plates 204 a and204 b. FIGS. 7 a, 7 c and 8 show the micro mirror 202 above an electrode126. In operation, a voltage is applied to an electrode 126 on one sideof the mirror 202 to control the deflection of the corresponding part ofthe mirror plate 204 above the electrode 126 (side 204 a in FIG. 8). Asshown in FIG. 8, when a voltage is applied to the electrode 126, half ofthe mirror plate 204 a is attracted to the electrode 126 and the otherhalf of the mirror plate 204 b is moved away from the electrode 126 andthe second substrate 107 due to the structure and rigidity of the mirrorplate 204. This causes the mirror plate 204 to rotate about the torsionspring hinge 206. When the voltage is removed from the electrode 126,the hinge 206 causes the mirror plate 204 to spring back to its unbiasedposition as shown in FIG. 7 a. Alternatively, in the embodiment with thediagonal hinge 206 illustrated in FIGS. 2 a, 2 b and 3, a voltage may beapplied to the electrode 126 on the other side of the mirror plate 204to deflect the mirror 202 in the opposite direction. Thus, lightstriking the mirror 202 is reflected in a direction that can becontrolled by the application of voltage to the electrode 126.

One embodiment is operated as follows. Initially the mirror 202 isundeflected as shown in FIGS. 7 a and 7 c. In this unbiased state, anincoming light beam, from a light source, obliquely incident to SLM 100is reflected by the flat mirror 202. The outgoing, reflected light beammay be received by, for example, an optical dump. The light reflectedfrom the undeflected mirror 202 is not reflected to a video display.

When a voltage bias is applied between half of the mirror plate 204 aand the electrode 126 below it, the mirror 202 is deflected due toelectrostatic attraction. In one embodiment, when the mirror plate 204 ais deflected downward as shown in FIG. 8, V_(e1) is preferably 12 volts,V_(b)-10 volts and V_(e2) 0 volts. Similarly (or conversely), when themicro plate 204 b is deflected downward, V_(e1) is preferably 0 volts,V_(b)-10 volts and V_(e2) 12 volts. Because of the design of the hinge206, one side of the mirror plate 204 a or 204 b (namely, the side abovethe electrode 126 having a voltage bias), is deflected downward (towardsthe second substrate 107) and the other side of the mirror plate 204 bor 204 a is moved away from the second substrate 107. Note that in onepreferred embodiment substantially all the bending occurs in the hinge206 rather than the mirror plate 204. This may be accomplished in oneembodiment by making the hinge width 222 thin, and connecting the hinge206 to the support posts only on both ends. The deflection of the mirrorplate 204 is limited by motion stops 405 a or 405 b, as described above.The full deflection of the mirror plate 204 deflects the outgoingreflected light beam into the imaging optics and to the video display.

When the mirror plate 204 deflects past the “snapping” or “pulling”voltage (approximately 12 volts or less in one embodiment), therestoring mechanical force or torque of the hinge 206 can no longerbalance the electrostatic force or torque and the half of the mirrorplate 204 having the electrostatic force under it, 204 a or 204 b,“snaps” down toward the electrode 126 under it to achieve fulldeflection, limited only by the motion stop 405 a or 405 b, asapplicable. In the embodiment where the hinge 206 is parallel to asupport wall of the spacer support frame 210 as shown in FIGS. 12 a, 12b and 13, to release the mirror plate 204 from its fully deflectedposition, the voltage must be turned off. In the embodiment where thehinge 206 is diagonal as shown in FIGS. 2 a, 2 b and 3, to release themirror plate 204 from its fully deflected position, the voltage must beturned off while the other electrode is being energized and the mirror202 is attracted to the other side.

The micro mirror 202 is an electromechanically bistable device. Given aspecific voltage between the releasing voltage and the snapping voltage,there are two possible deflection angles at which the mirror plate 204may be, depending on the history of mirror 202 deflection. Therefore,the mirror 202 deflection acts as a latch. These bistability andlatching properties exist since the mechanical force required fordeflection of the mirror 202 is roughly linear with respect todeflection angle, whereas the opposing electrostatic force is inverselyproportional to the distance between the mirror plate 204 and theelectrode 126.

Since the electrostatic force between the mirror plate 204 and theelectrode 126 depends on the total voltage difference between the mirrorplate 204 and the electrode 126, a negative voltage applied to a mirrorplate 204 reduces the positive voltage needed to be applied to theelectrode 126 to achieve a given deflection amount. Thus, applying avoltage to a mirror array 103 can reduce the voltage magnituderequirement of the electrodes 126. This can be useful, for example,because in some applications it is desirable to keep the maximum voltagethat must be applied to the electrodes 126 below 12V because a 5Vswitching capability is more common and cost-effective in thesemiconductor industry.

Since the maximum deflection of the mirror 202 is fixed, the SLM 100 canbe operated in a digital manner if it is operated at voltages past thesnapping voltage. The operation is essentially digital because, in theembodiment where the hinge 206 is parallel to a support wall of thespacer support frame 210 as shown in FIGS. 2 a, 2 b and 3, the mirrorplate 204 is either fully deflected downward by application of a voltageto the associated electrode 126 or is allowed to spring upward, with novoltage applied to the associated electrode 126. In the embodiment withthe hinge 206 diagonal as shown in FIGS. 12 a, 12 band 13, the mirrorplate 204 is either fully deflected downward by application of a voltageto the associated electrode 126 on one side of the mirror plate 204 ordeflected downward to the other side of the mirror plate 204 whenenergizing the other electrode 126 on the other side of the mirror plate204. A voltage that causes the mirror plate 204 to fully deflectdownward until stopped by the physical elements that stop the deflectionof the mirror plate 204 is known as a “snapping” or “pulling” voltage.Thus, to deflect the mirror plate 204 fully downward, a voltage equal orgreater to the snapping voltage is applied to the correspondingelectrode 126. In video display applications, when the mirror plate 204is fully deflected downward, the incident light on that mirror plate 204is reflected to a corresponding pixel on a video display screen, and thepixel appears bright. When the mirror plate 204 is allowed to springupward, the light is reflected in such a direction so that it does notstrike the video display screen, and the pixel appears dark.

During such digital operation, it is not necessary to keep the fullsnapping voltage on an electrode 126 after an associated mirror plate204 has been fully deflected. During an “addressing stage,” voltages forselected electrodes 126 that correspond to the mirror plates 204 whichshould be fully deflected are set to levels required to deflect themirror plates 204. After the mirror plates 204 in question havedeflected due to the voltages on electrodes 126, the voltage required tohold the mirror plates 204 in the deflected position is less than thatrequired for the actual deflection. This is because the gap between thedeflected mirror plate 204 and the addressing electrode 126 is smallerthan when the mirror plate 204 is in the process of being deflected.Therefore, in the “hold stage” after the addressing stage the voltageapplied to the selected electrodes 126 can be reduced from its originalrequired level without substantially affecting the state of deflectionof the mirror plates 204. One advantage of having a lower hold stagevoltage is that nearby undeflected mirror plates 204 are subject to asmaller electrostatic attractive force, and they therefore remain closerto a zero-deflected position. This improves the optical contrast ratiobetween the deflected mirror plates 204 and the undeflected mirrorplates 204.

With the appropriate choice of dimensions (in one embodiment, spacersupport frame 210 separation between the mirror plate 204 and theelectrode 126 of 1 to 5 microns depending on mirror structure anddeflection angle requirements, and hinge 206 thickness of 0.05 to 0.45microns) and materials (such as single crystal silicon (100)), areflective SLM 100 can be made to have an operating voltage of only afew volts. The shear modulus of the torsion hinge 206 made of singlecrystal silicon may be, for example, 5.times.10.sup.10 Newton permeter-squared per radium. The voltage at which the electrode 126operates to fully deflect the associated mirror plate 204 can be madeeven lower by maintaining the mirror plate 204 at an appropriate voltage(a “negative bias”), rather than ground. This results in a largerdeflection angle for a given voltage applied to an electrode 126. Themaximum negative bias voltage is the releasing voltage, so when theaddressing voltage reduced to zero the mirror plate 204 can snap back tothe undeflected position

It is also possible to control the mirror plate 204 deflections in amore “analog” manner. Voltages less than the “snapping voltage” areapplied to deflect the mirror plate 204 and control the direction inwhich the incident light is reflected.

Alternate Applications:

Aside from video displays, the spatial light modulator 100 is alsouseful in other applications. One such application is in masklessphotolithography, where the spatial light modulator 100 directs light todevelop deposited photoresist. This removes the need for a mask tocorrectly develop the photoresist in the desired pattern.

Although the invention has been particularly shown and described withreference to multiple embodiments, it will be understood by personsskilled in the relevant art that various changes in form and details canbe made therein without departing from the spirit and scope of theinvention. For example, the mirror plates 204 may be deflected throughmethods other than electrostatic attraction as well. The mirror plates204 may be deflected using magnetic, thermal, or piezo-electricactuation instead.

1. A method of fabricating a spatial light modulator having asilicon-bearing standoff structure, the method comprising: providing afirst substrate including a mirror plate layer; forming a dielectriclayer on the mirror plate layer; removing a first portion of thedielectric layer to provide standoff cavities disposed in the dielectriclayer; filling the first portion of the standoff cavities with asilicon-bearing material, thereby forming a standoff structure; removinga second portion of the dielectric layer; providing a second substratehaving one or more electrodes; bonding the first substrate to the secondsubstrate; forming a hinge and mirror plate from the mirror plate layer;and applying a reflective surface coupled to the mirror plate and abovea portion of the hinge.
 2. The method of claim 1 wherein removing thesecond portion of the dielectric layer includes removing a remainder ofthe dielectric layer.
 3. The method of claim 1 wherein the standoffstructure and mirror plate layer are formed from a same material.
 4. Themethod of claim 1 wherein at least one of the mirror plate layer or thestandoff structure comprises at least one of a single crystal siliconmaterial or a polysilicon material.
 5. The method of claim 1 wherein themirror plate layer and the standoff structure have a same crystalorientation.
 6. The method of claim 1 further comprising forming amotion stop structure coupled to the mirror plate layer.
 7. The methodof claim 6 wherein the motion stop structure comprises a silicon bearingmaterial.
 8. The method of claim 6 wherein forming the motion stopstructure comprises performing an etching process and performing anepitaxial process.
 9. The method of claim 1 wherein filling the firstportion of the standoff cavities comprises performing an epitaxialprocess.
 10. The method of claim 1 wherein removing the first portion ofthe dielectric layer comprises performing an etching process.
 11. Themethod of claim 1 wherein the dielectric layer comprises a depositedlayer.
 12. A method of fabricating an array of micro-mirrors for aspatial light modulator having a silicon-bearing standoff structure, themethod comprising: providing a first substrate including a mirror platelayer; forming a dielectric layer on the mirror plate layer; removing afirst portion of the dielectric layer to provide an array of standoffcavities disposed in the dielectric layer; filling some of the firstportion of the array of standoff cavities with a silicon-bearingmaterial, thereby forming an array of standoff structures; removing asecond portion of the dielectric layer; providing a second substratehaving one or more electrodes; bonding the first substrate to the secondsubstrate; and forming an array of micro-mirrors, wherein each of themicro-mirrors comprises: a mirror plate and a hinge formed from themirror plate layer, and a reflective surface coupled to the top surfaceof the mirror plate and above a portion of the hinge.
 13. The method ofclaim 12 wherein removing the second portion of the dielectric layerincludes removing a remainder of the dielectric layer.
 14. The method ofclaim 12 wherein the standoff structure comprises a polysiliconmaterial.
 15. The method of claim 12 further comprising forming a motionstop structure coupled to the mirror plate layer.
 16. The method ofclaim 15 wherein the motion stop structure comprises a polysiliconmaterial.
 17. The method of claim 12 wherein the dielectric layercomprises a deposited layer.
 18. A method of fabricating a spatial lightmodulator array, the method comprising: providing a first substrateincluding a mirror plate layer; forming a dielectric layer on the mirrorplate layer; removing a first portion of the dielectric layer to providean array of standoff cavities disposed in the dielectric layer, whereinthe standoff cavities are provided in a spatial manner as an arrayincluding a plurality of first standoff cavities arranged in strips anda plurality of second standoff cavities arranged in strips, the secondstandoff cavities intersecting the first standoff cavities to form thearray; filling at least a portion of the first portion of the array ofstandoff cavities with a silicon-bearing material, thereby forming anarray of standoff structures; removing a second portion of thedielectric layer; providing a second substrate having one or moreelectrodes; bonding the first substrate to the second substrate; formingan array of micro-mirrors, wherein each of the micro-mirrors comprises:a mirror plate and a hinge formed from the mirror plate layer, and areflective surface coupled to the top surface of the mirror plate andabove a portion of the hinge.
 19. The method of claim 18 furthercomprising forming a plurality of motion stop structures coupled to themirror plate layer.
 20. The method of claim 19 wherein the plurality ofmotion stop structures comprise a silicon bearing material.